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| BBY65... Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOS and VCXOS High capacitance ratio and good C-V linearity 1 BBY65-02V 2 Type BBY65-02V Package SC79 Configuration single LS(nH) Marking 0.6 F Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 15 50 -55 ... 150 -55 ... 150 Unit V mA C 1 May-07-2003 BBY65... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 C AC Characteristics Diode capacitance VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz CT Unit max. nA typ. IR 10 100 pF 28.2 2.6 29.5 20.25 9.8 4.45 2.7 10.9 4.55 0.6 30.8 2.8 0.9 pF pF Capacitance ratio VR = 0.3 V, VR = 4.7 V CT0.3 / CT4.7 CT1 /CT3 rS 10 - Capacitance ratio VR = 1 V, VR = 3 V VR = 1 V, f = 470 MHz 2 May-07-2003 Series resistance BBY65... Diode capacitance CT = f = 1MHz 40 (VR ) pf 30 CT 25 20 15 10 5 0 0 1 2 3 V VR 5 3 May-07-2003 |
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